Biography

Developed first Cu process at Intel Corporation in two years, then transferred mass production process to virtual factory which yielded max production of microprocessors  A key contributor in Strain Si-based transistor manufacturing which was a major milestone for maintaining Moor’s Law in semiconductor Industry; reduced defects and improved yields by strain engineering to overcome geometric scaling in Si-based thin-film transistor (TFT) technology limitations by significantly improving carrier mobility

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Research Interest

Electronic, photonic and energy materials and devices, applications of PVD, CVD, and ALD for semiconductor devices, nano-scale electronics, and sensors. Low-cost atomic layer electroless deposition, advanced electrodeposition for metals and alloys for interconnect and metallization technology. Integration of electronics and biology for bio-sensors.